Skip to Main Content
A memory cell based on trapped flux in superconductors has been built and tested. The cell is constructed entirely by vacuum evaporation of thin films and can be selected by coincident current or by other techniques, with drive-current requirements less than 150 ma. The short transition time of the trapped-flux cell indicates its possible use in high-speed memories. The superconductive film memory does not exhibit the problems of “delta noise” in core memories resulting from the difference in half-select pulse outputs.
Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.