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A 3000-Mc Lumped-Parameter Oscillator Using an Esaki Negative-Resistance Diode

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1 Author(s)

The use of the negative-resistance diode discovered by L. Esaki1 (sometimes referred to as the tunnel diode) in very-high-frequency oscillator circuits employing wave guides and cavities as tuned elements has met with difficulties as a result of so-called parasitic oscillations that arise from the necessity of driving the circuit from a very low-impedance dc source.2 This communication describes a different design approach, based on lumped-parameter principles, which is free from this type of biasing problem. This approach has produced oscillators which operate well into the microwave region (3000 Mc) where it has not previously been thought profitable to employ only lumped-parameter elements.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

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IBM Journal of Research and Development  (Volume:3 ,  Issue: 4 )