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Some Properties of Experimental 1000-Mc Transistors

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2 Author(s)

Experimental transistors designed to operate above 1000 Mc are described and measurements of their electrical parameters discussed. The design is a diffused-base drift transistor structure with minimized bulk resistances and junction capacitances. Measurements of the short-circuit current gain (−h21p) with both emitter and collector reverse-biased, indicated that the passive circuit comprising extrinsic parameters only could produce a gain greater than unity. Interpretation of measurements using a simplified equivalent circuit shows that reduction of bulk resistances leads to an appreciable passive or feed-through current. An oscillator is described in which the transistors operated up to 1550 Mc.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:3 ,  Issue: 3 )

Date of Publication:

July 1959

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