By Topic

Domain Walls in Thin Ni-Fe Films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $33
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)

Observations of domain walls in Ni-Fe films as a function of thickness demonstrate the strong influence of magnetic stray fields on the wall structure, hence on the coercivity for wall motion. In order to reduce the stray-field energy, the Bloch walls in films thicker than 1000 A are subdivided into sections with alternating polarity which are separated by Bloch lines. In thinner films, the domain walls are of the Néel type. The position of Bloch lines in such walls is indicated by crosswalls. The motion of Bloch lines in an applied field can be observed particularly easily on scratches in negative magnetostrictive material; such scratches display properties corresponding to Néel walls. Crosswalls are also present at the ends of domains and around holes in the film material. A crosswall is distinguished from ordinary domain walls by the continuous change of the angle of magnetization along both sides of it.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:4 ,  Issue: 2 )