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Tunnel Diodes by Vapor Growth of Ge on Ge and on GaAs [Letter to the Editor]

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In thee xperimental work reported here it habse en shown that degenerately doped n type Ge can be vapor-grown epitaxially on degenerately doped p-type Ge or GaAs substrates, yielding tunnel junctions in either case. The vapor growth was performed at a low temperature in order to minimize interdiffusion of impurities at the junction. However, it was found that some heat treatment (subsequent to the vapor-growth step) increased peak current densities. G -Ge junctions were further heat treated and peak current densities then decreased. Both P and As have been used to dope thvea por-grown Ge. Up to the present time, higher concentrations have been achieved with phosphorus. Since it has been observed in alloyed tunnel junctions that As doping will give better peak-to-valley ratios, and since all the As incorporated in vapor-grown Ge is electrically active,10 further work is being done on As doping.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:4 ,  Issue: 3 )

Date of Publication:

July 1960

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