The incorporation of arsenic into single-crystal germanium grown by the disproportionation of GeI2 was studied using As76 as a radioactive tracer, and using measurements of the Hall effect. The deposition was carried out in a sealed tube using as source material a single crystal of Ge doped to 2.5 × 1019 atoms/cm3 with As. It was found that all the As incorporated into the vapor-grown Ge was electrically active, at least for material grown on a (211) Ge seed. The concentration of As in the deposited Ge was lower than that in the source, and appeared to depend on the crystallographic orientation of the growing face.
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IBM Journal of Research and Development
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06 April 2010
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