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Incorporation of As Into Vapor-Grown Ge

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2 Author(s)

The incorporation of arsenic into single-crystal germanium grown by the disproportionation of GeI2 was studied using As76 as a radioactive tracer, and using measurements of the Hall effect. The deposition was carried out in a sealed tube using as source material a single crystal of Ge doped to 2.5 × 1019 atoms/cm3 with As. It was found that all the As incorporated into the vapor-grown Ge was electrically active, at least for material grown on a (211) Ge seed. The concentration of As in the deposited Ge was lower than that in the source, and appeared to depend on the crystallographic orientation of the growing face.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

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IBM Journal of Research and Development  (Volume:4 ,  Issue: 3 )