Measurements of the incorporation of iodine into single crystals of Ge grown by the disproportionation of GeI2 have been made using I131 as a radioactive tracer. The results show that I is not likely to be a hindrance to device use of this material since the amount incorporated is moderately low (1014–1015 atoms/cm3). and does not appear to be correlated with electrical effects. It does not diffuse appreciably (D875°<10−13 cm2/sec). No excess is found at an all-deposited p-n junction. The concentration of I incorporated appears to decrease with increasing temperature, to be independent of growth rate on a (111) orientation of the seed, but to vary by a factor of up to 50 from one orientation to another. It is deduced that the I is incorporated by a mechanism intimately connected with the crystal growth.
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IBM Journal of Research and Development
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06 April 2010
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