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Electrical Properties of Vapor-Grown Ge Junctions

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4 Author(s)

A method of fabricating p-n junctions and p-n junction devices by a closed-cycle iodide vapor-growth process is described. The electrical characteristics of junctions made by alternately depositing p-type and n-type germanium onto a germanium substrate compare favorably with those fabricated by other means. Device arrays, such as diode matrices, and multijunction structures have been made by this process. If sufficient control can be achieved, devices having a wide range of impurity distributions and geometric configurations will be possible.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:4 ,  Issue: 3 )

Date of Publication:

July 1960

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