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A method of fabricating p-n junctions and p-n junction devices by a closed-cycle iodide vapor-growth process is described. The electrical characteristics of junctions made by alternately depositing p-type and n-type germanium onto a germanium substrate compare favorably with those fabricated by other means. Device arrays, such as diode matrices, and multijunction structures have been made by this process. If sufficient control can be achieved, devices having a wide range of impurity distributions and geometric configurations will be possible.
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