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Epitaxial Vapor Growth of Ge Single Crystals in a Closed-Cycle Process

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The Ge-I2 disproportionation reaction in a sealed tube will deposit Ge epitaxially upon Ge seeds at a typical rate of 10µ/hr at a typical temperature of 400°C. Dislocations are of the same kind and approximate concentrations as observed in ordinary melt-grown Ge. Chemical purity is comparable to the best melt-grown Ge. The fraction of donors transferred from the source material to the deposited material is nearly unity over a wide range of concentrations, while the fraction of acceptors transferred is considerably less than unity. However, either n-type or p-type Ge can be deposited, and by using two sources within the same tube alternating layers can be obtained.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

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IBM Journal of Research and Development  (Volume:4 ,  Issue: 3 )