The Ge-I2 disproportionation reaction in a sealed tube will deposit Ge epitaxially upon Ge seeds at a typical rate of 10µ/hr at a typical temperature of 400°C. Dislocations are of the same kind and approximate concentrations as observed in ordinary melt-grown Ge. Chemical purity is comparable to the best melt-grown Ge. The fraction of donors transferred from the source material to the deposited material is nearly unity over a wide range of concentrations, while the fraction of acceptors transferred is considerably less than unity. However, either n-type or p-type Ge can be deposited, and by using two sources within the same tube alternating layers can be obtained.
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IBM Journal of Research and Development
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06 April 2010
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