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Directional Coupling and its Use for Memory Noise Reduction

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1 Author(s)

The coupling between a bit line and its adjacent sense line in a word-organized memory array is a phenomenon of considerable concern to the memory designer. In many cases, the bit noise induced in the sense line during a WRITE cycle is sufficiently large to saturate and block the sensitive sense amplifier if steps are not taken to minimize the effects of the bit-sense coupling. This Communication presents a method for directing this noise away from the input terminals of the sense amplifier by utilizing the inherently directional properties of the coupling between two parallel transmission lines

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

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IBM Journal of Research and Development  (Volume:7 ,  Issue: 3 )