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Characterization of devices for high speed ACP (Advanced Circuit Program) circuits demands an accurate study of transients and switching delays. This paper describes (a) the large-signal transistor model evolved for the purpose of carrying out such an analysis; (b) methods of measuring device parameters with relevant theory; (c) computational techniques most adaptable; and (d) correlation between predicted and observed transients. Many new ideas in the development of the device model, measurements, and computational procedure are reported and could be used for any general circuit analysis.
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