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Line Widths and Pressure Shifts in Mode Structure of Stimulated Emission from GaAs Junctions

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3 Author(s)
Stevenson, M.J. ; Quantum Science Corporation, New York, USA ; Axe, J.D. ; Lankard, J.R.

Stimulated emission from forward biased p-n GaAs junctions has been reported by several laboratories.1,2 Most of the reported spectroscopic measurements have been made under medium resolution. This Communication reports high-resolution measurements of the line width as well as the dependence of the GaAs stimulated emission characteristics on hydrostatic pressure.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:7 ,  Issue: 2 )

Date of Publication:

April 1963

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