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Change in Fermi Surfaces of Graphite by Dilute Acceptor Doping

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1 Author(s)
Soule, D.E. ; Research Laboratory, Carbon Products Div., Union Carbide Corp., USA

The effect of doping graphite single crystals with the acceptor boron was studied in the dilute range from ≲0.1 ppm to 0.5% by measurements of the Hall effect and de Haas-van Alphen effect. The transition from a mixed electron and hole conduction in the narrow band overlap region (0.035 eV) to that of a single hole conduction produces a peak in the Hall coefficient that shifts to a lower boron concentration with a decrease in temperature. The increase in hole concentration is accompanied by a rapid decrease in mobility, demonstrating the importance of collision broadening. Preliminary de Haas-van Alphen results tentatively identify the major electron and hole Fermi surfaces by means of the period shift with increasing acceptor concentration. A new, very small ellipsoid-like Fermi surface was discovered. It is aligned along the hexagonal axis, having an anisotropy ratio of 9 with orbital masses of about 0.0023 m0 for H ∥ C and 0.017 m0 for H ⊥ C. Analysis strongly indicates that this surface contains minority holes. Three of these surfaces are considered to be aligned symmetrically like “outriggers” about the major hole surface, producing a total of six in the Brillouin zone. A comparison is made with the cyclotron resonance results and a possible interpretation of these minority Fermi surfaces is presented using the Slonczewski-Weiss band model.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:8 ,  Issue: 3 )