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Glass-Passivated GaAs Chip Tunnel Diode

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3 Author(s)

A novel approach to the fabrication of tunnel diodes described. The experimental tunnel diode is a gallium arsenide planar device, using a conventional alloyed junction in an epitaxially grown GaAs substrate, and hermetically sealed by a high-temperature glass coating. The tunnel diode is fused to a circuit module using a solder reflow method. This package provides a high degree of mechanical reliability, great reduction in size, and an easy means of interconnection. Another unique feature is that the peak current is tailored electrically to within 1% by altering the impurity distribution near the junction, rather than by the conventional electrochemical etching technique. The resulting gallium arsenide tunnel diodes, having peak currents of 8 mA and capacitances of 5 pF, are suitable for use in a one-nanosecond switching circuit.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

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IBM Journal of Research and Development  (Volume:8 ,  Issue: 5 )