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Vapor-Phase Polishing of Silicon with H2-HBr Gas Mixtures

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The production of smooth, flat, and clean surfaces on semiconductors, such as silicon and germanium, for the fabrication of planar devices is generally achieved by a combination of mechanical and chemical polishing procedures. With suitable equipment and fine polishing grit a skilled operator can mechanically polish a silicon single-crystal disk to optical flatness. Such treatment leaves a mechanically-damaged surface layer on the polished sample that is removed by a chemical etching procedure which removes more silicon while retaining the smooth, flat surface.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:9 ,  Issue: 4 )

Date of Publication:

July 1965

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