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Properties of GaAs Diodes with [P-P0-N] Structures

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The electrical and electroluminescent properties of GaAs diodes with P-P0-N structure are discussed with special emphasis on their negative resistance characteristics. A description is given of the fabrication of diodes, consisting of a central, manganese-doped, high-resistivity layer (the P0 region) between low-resistivity P- and N-layers. The theory of Dumke for the origin of the negative resistance characteristics is shown to give a good account of their static characteristics. Extension of the theory to transient characteristics (i.e., response to voltage pulses in excess of the breakdown voltage) predicts faster switching speeds than have been observed experimentally; nevertheless, diodes fabricated by one technique switch within a few nanoseconds at room temperature with overvoltages of only a few volts.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

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IBM Journal of Research and Development  (Volume:9 ,  Issue: 4 )