By Topic

Separation of the Linear and Parabolic Terms in the Steam Oxidation of Silicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)

Using accurate film thickness measurements, it was found possible to separate linear and parabolic terms in the steam oxidation of silicon, and thus obtain much more precise expressions for the thermal oxidation under different conditions. The combined linear-parabolic relation was found to be applicable to various crystallographic orientations. The pure parabolic “constant” obtained from this relation was the same for different crystal orientations, but the linear term in the relation was found to be very surface sensitive. By these techniques, more accurate parabolic rate “constants” can be obtained and the linearity of the log k vs 1/T plot can be extended to much lower temperatures. The activation energy of the parabolic term for steam oxidation was found to be only 16 kcal/mole. The effect of neglecting the linear term in various methods of computing the parabolic rate is discussed.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:10 ,  Issue: 3 )