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High-resolution Positive Resists for Electron-beam Exposure

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3 Author(s)
Haller, I. ; IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA ; Hatzakis, M. ; Srinivasan, R.

This paper examines the utility of four newly proposed positive resists whose processing combines electron-beam-induced degradation of certain polymers and, subsequently, in situ fractionation according to molecular weight. Positive-resist action in four systems formulated on this concept has been demonstrated. Typical sensitivity in electron-beam exposure is 10−4 coulomb/cm2. Two resists exhibit resolution better than 1 micron. One resist investigated in detail yields extremely clean edges in electron-beam exposure, is resistant to hydrofluoric acid etching baths, and appears otherwise applicable to the fabrication of circuit elements of submicron size.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:12 ,  Issue: 3 )