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Negative Differential Mobility in Nonparabolic Bands

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2 Author(s)
Persky, G. ; Bell Telephone Laboratories Incorporated, Murray Hill, New Jersey, USA ; Bartelink, D.J.

A strong NDM (negative differential mobility) in n-InSb at low temperatures is predicted from a single non-parabolic band model. Calculations allowing for the anisotropy of the distribution function have been made using (1) a drifted Maxwellian, and (2) a “two-temperature” model. The calculated NDM threshold field of 550 V/cm is in an observable field range in p-n junctions. In bulk samples, where breakdown occurs at E ≈ 200 V/cm, domain nucleation may take place at high-field inhomogeneities and contribute to the dynamics of the breakdown process and attendant microwave emission.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:13 ,  Issue: 5 )