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Avalanche Shock Fronts in p-n Junctions

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2 Author(s)
Bartelink, D.J. ; Bell Telephone Laboratories, Incorporated, Murray Hill, New Jersey 07974, USA ; Scharfetter, D.L.

The conditions necessary for the formation of avalanche shock fronts, narrow layers of avalanche moving through a diode depletion layer faster than the carrier saturated drift velocity, are shown to be related to the large-signal limits of Read and more general avalanche transit time diode theory. Analysis of shock fronts by a simple analytic method has been used to interpret computer simulations of high efficiency microwave oscillator diodes. The oscillation mode, called the Trapatt mode, involves a compensated electron-hole plasma that is trapped in the depletion layer for a portion of each cycle.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

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IBM Journal of Research and Development  (Volume:13 ,  Issue: 5 )