Location of the 〈111〉 Conduction Band Minima in the GaxIn1−xSb Alloy System

Pressure dependence of the resistivity and optical absorption by conduction band electrons are used to determine the position of the 〈111〉 (L
1
) conduction bank minima in the Ga
x
In
1−x
Sb alloy system. These experimental data permit a more precise estimate of the position of the L
1
minima than had been possible using Gunn effect data alone.