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Location of the 〈111〉 Conduction Band Minima in the GaxIn1−xSb Alloy System

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4 Author(s)
Lorenz, M.R. ; IBM Thomas J. Watson Research Cenier, Yorktown Heights, N. Y. 10598, USA ; McGroddy, J.C. ; Plaskett, T.S. ; Porowski, S.

Pressure dependence of the resistivity and optical absorption by conduction band electrons are used to determine the position of the 〈111〉 (L1) conduction bank minima in the GaxIn1−xSb alloy system. These experimental data permit a more precise estimate of the position of the L1 minima than had been possible using Gunn effect data alone.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:13 ,  Issue: 5 )

Date of Publication:

Sept. 1969

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