By Topic

Negative Conductivity Effects and Related Phenomena in Germanium. Part II

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Smith, J.E. ; IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA ; Nathan, M.I. ; McGroddy, J.C.

This paper is the second part of a two-part review of recent work on current instabilities and related properties of germanium in high electric fields. In this part the transferred carrier mechanism for producing bulk negative differential conductivity (BNDC) in a semiconductor is discussed. Experimental work on instabilities related to three realizations of this effect, in uniaxially compressed n and p-type Ge, and in n-type Ge at low temperatures with field and current in a 〈111〉 direction, is reviewed. Theoretical understanding of these effects, which is largely qualitative at this time, is discussed. In an appendix a list of materials in which BNDC effects have been observed is presented, with some of the relevant properties of these materials.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:13 ,  Issue: 5 )