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Physics of Instabilities in Amorphous Semiconductors

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1 Author(s)
Fritzsche, H. ; James Franck Institute and Department of Physics at the University of Chicago, Illinois 60637, USA

A four-fold classification of the current-controlled instabilities in amorphous semiconductors is proposed. The experimental evidence supporting a simple band model for the amorphous covalent alloys is given. The present understanding of the reversible switching effects and of the switching with memory is discussed.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

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IBM Journal of Research and Development  (Volume:13 ,  Issue: 5 )