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Characteristics of Semiconducting Glass Switching/Memory Diodes

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1 Author(s)
Pearson, A.D. ; Bell Telephone Laboratories, Incorporated, Murray Hill, New Jersey 07974, USA

Semiconducting glass diodes can exhibit at least three conducting states: a high-resistance, or “off” state; a low-resistance, or “on” state; and a negative resistance state. When appropriately pulsed they can also display a memory function. The laboratory operation of simple diodes and the methods of inducing transitions among the various states are described. In addition, the possible role of phase changes in the mechanism of device operation is discussed, and new evidence in support of a filamentary conduction hypothesis is presented.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:13 ,  Issue: 5 )