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Calculation of the Current Density in the Contacts of a Thin Film Resistor

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1 Author(s)
Overmeyer, J. ; IBM Components Division Laboratory, E. Fishkill, New York 12533, USA

The two-dimensional boundary value problem appropriate to current flow in a film resistor is examined. A simple closed-form solution for current density into the contact is found to exist for the important case of a thin film resistor with extended lands. The spatial dependence of the current density into the contact is found to be similar to that obtained by Kennedy and Murley for the diffused resistor, with film thickness entering the functional dependence in a role analogous to the diffusion length of the dopant ion in the diffused resistor.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:14 ,  Issue: 1 )