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A series of passivating and masking films was developed and evaluated for use in a Ge planar transistor technology. In the search for satisfactory films, silicon dioxide, aluminum oxide, silicon nitride and multilayer combinations of these films, as well as some doped and mixed-composition films, were studied. The films, formed by pyrolytic deposition or by sputtering, were evaluated and compared with respect to the following properties: etch rate; dopant masking; mechanical stress; oxygen, hydrogen and water permeability; stability with respect to elevated temperature electrical-bias stressing; and Ge-insulator interface electrical condition. The most important results of our experiments are the following: Silicon nitride appears to be the only satisfactory mask for Ga diffusions, although silicon dioxide is adequate for As, P and Sb diffusion masking. The dielectric properties of pyrolytically deposited SiO
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