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RF Sputtered Strontium Titanate Films

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1 Author(s)
Pennebaker, W.B. ; IBM Thomas J. Watson Research Center, Yorktown Heights, New York, USA

Two deposition parameters are important in rf sputtering of SrTiO3 films: the oxygen-argon content ratio, and the substrate temperature. More than 1% oxygen is needed to produce insulating films; the exact percentage required depends on system cleanliness. Both dielectric constant and crystallite size increase with increasing substrate temperature. Films of 2400 Å deposited at 500°C on gold have a dielectric constant of 200. The dc conductivity closely follows the Poole-Frenkel model. Two dielectric loss peaks are believed to be caused in part by an oxygen deficient region near one electrode. The variation in the dielectric constant κ with electric field is similar to that observed in bulk material.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:13 ,  Issue: 6 )

Date of Publication:

Nov. 1969

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