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Re-emission of Sputtered SiO[2] During Growth and Its Relation to Film Quality

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3 Author(s)
L. I. Maissel ; IBM Components Division Laboratory, E. Fishkill, New York 1253, USA ; R. E. Jones ; C. L. Standley

An improved technique for measuring re-emission coefficients is described and data on the effect of temperature are presented. These are discussed in the light of a physical model of film growth during sputtering wherein constant re-emission of material throughout deposition occurs. Evidence is then presented that such re-emission is essential if films of high quality are to be obtained. To help assess “quality” in a quantitative fashion use has been made of the PBUT (pin-hole breakup thickness) phenomenon, which is described in some detail. The influence on PBUT of several system parameters such as sputtering pressure and impurity content is discussed and related to the re-emission coefficient.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:14 ,  Issue: 2 )