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Silicon and Silicon-dioxide Processing for High-frequency MESFET Preparation

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1 Author(s)
Mohr, Th.O. ; IBM Zurich Research Laboratory, 8803, Rüschlikon-ZH, Switzerland

Silicon wafer processing is described which provides submicrometer epitaxial layers on top of high-resistivity silicon substrates for fabrication of high-frequency metal-semiconductor field-effect transistors. Silicon-dioxide underetching at the border of an oxide window, performed in hydrogen at elevated temperatures, is one method of realizing 1-micrometer device structures.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:14 ,  Issue: 2 )

Date of Publication:

March 1970

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