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Reduction of Electromigration in Aluminum Films by Copper Doping

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3 Author(s)
I. Ames ; IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA ; F. M. d'Heurle ; R. E. Horstmann

We have found that the lifetime of aluminum films subjected to high current densities at elevated temperatures can be increased by the addition of copper. Previous studies have indicated that the failure mechanism is a combination of electromigration-induced phenomena, including nucleation and growth of voids, which are gated primarily by material transport along grain boundaries. On the basis of the present study, it appears that the presence of copper causes an appreciable retardation in the rate at which this overall combination of processes takes place, thereby producing a considerable increase in lifetime.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:14 ,  Issue: 4 )