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Silicon Defect Structure Induced by Arsenic Diffusion and Subsequent Steam Oxidation

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2 Author(s)
Dash, S. ; Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California 94304, USA ; Joshi, M.L.

Misfit dislocation nets are known to occur when very high amounts of phosphorus and boron are diffused into silicon single-crystal wafers. Diffusion of arsenic in silicon is not known to produce such dislocations. Through transmission electron microscopy it is shown in this paper that diffusion of high amounts (up to 1.6 × 1021 atoms/cm3) of arsenic creates Frank hexagonal loops on (111) planes parallel to the diffusion surface, and stacking faults on the inclined {111} planes, instead of misfit dislocation nets (the latter are still not observed). These faults and loops are found to be extrinsic, and are thought to be due to insertion of extra silicon layers in the matrix where the stacking fault energy is decreased by arsenic atoms. The driving force for the generation of loops and faults is shown to be the concentration gradient rather than fast cooling.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:14 ,  Issue: 4 )

Date of Publication:

July 1970

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