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Equivalent Circuit for Conductivity-Temperature Characteristics of the PdO/Ag-Pd Glaze Resistor

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1 Author(s)
Kahan, G.J. ; IBM Components Division Laboratory, East Fishkill, New York 12533, USA

It is shown that a reasonable fit of experimental to calculated data can be obtained with a simple model of the PdO/Ag-Pd glaze resistor. An equivalent circuit describing the temperature characteristics of the glaze resistor is proposed. The experimental measurements can be reproduced quite adequately over a considerable temperature range, using an equivalent circuit consisting of a semiconductor contact resistance in parallel with a metal. A quadratic term in (1/T2) in addition to the usual linear term with (1/T) for ln σ is used to obtain a good fit at low temperatures. (T = absolute temperature; σ = conductivity.) This parabolic curve approaches the experimentally observed values for palladium oxide.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:15 ,  Issue: 4 )