By Topic

An Arsenic Emitter Structure for High-Performance Silicon Transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $33
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
H. N. Ghosh ; IBM Components Division Laboratory, East Fishkill (Hopewell Junction), New York 12533, USA ; A. S. Oberai ; J. J. Chang ; M. B. Vora

Arsenic-doped emitters have been shown to produce high performance in bipolar silicon transistors. In comparison with phosphorus, the emitter dopant commonly used in the industry, the use of arsenic results in a steeper gradient (1024/cm4), less compensation of the base region, no “emitter dip” effect, and a flatter profile with higher sheet conductivity. Since arsenic atoms are a better match to Si than are phosphorus atoms and the arsenic process requires lower surface concentration for a particular diffusion depth and sheet conductivity, fewer crystal defects are generated. As a result the arsenic emitter process results in a higher device yield and is much more reproducible, even for shallow diffusion depths. Arsenic-emitter transistors, both with and without gold doping, are found to be superior in performance, with 1.6 to 2 times higher gain bandwidth, ƒT and current gain, β, than those with phosphorus emitters with similar geometry. Also the ability of the arsenic emitter to sustain large current densities, exceeding 30,000 A-cm−2, makes it extremely desirable for high density, small geometry, and high-performance silicon devices.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:15 ,  Issue: 6 )