By Topic

An AlN Switchable Memory Resistor Capable of a 20-MHz Cycling Rate and 500-picosecond Switching Time

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $33
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
R. F. Rutz ; IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA ; E. P. Harris ; J. J. Cuomo

We report here the operational characteristics of multistable resistance switching devices made from thin sputtered layers of AlN. These devices exhibit switching between high and low resistance states when proper electrical signals are applied. Repetitive switching at 20-MHz rates has been achieved, and switching times in the best units have been observed to be less than 500 picoseconds. These are believed to be the first active electronic switching devices to be reported utilizing AlN.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:17 ,  Issue: 1 )