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An AlN Switchable Memory Resistor Capable of a 20-MHz Cycling Rate and 500-picosecond Switching Time

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3 Author(s)
Rutz, R.F. ; IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA ; Harris, E.P. ; Cuomo, J.J.

We report here the operational characteristics of multistable resistance switching devices made from thin sputtered layers of AlN. These devices exhibit switching between high and low resistance states when proper electrical signals are applied. Repetitive switching at 20-MHz rates has been achieved, and switching times in the best units have been observed to be less than 500 picoseconds. These are believed to be the first active electronic switching devices to be reported utilizing AlN.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:17 ,  Issue: 1 )