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Refractive Index Dispersion in Semiconductor-related Thin Films

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2 Author(s)
Warnecke, A.J. ; IBM System Products Division Laboratory, East Fishkill (Hopewell Junction), New York 12533, USA ; LoPresti, P.J.

A technique is described for determining refractive index dispersion throughout the uv-visible spectrum in semiconductor-related transparent thin films. The dispersion constants that have been measured can be used in the design of optical systems and in photolithography. Measurements were made with the LASER-VAMFO interferometer. Calculations and analyses are also described which show the accuracy and repeatability of the technique. Data were taken for 28 different thin-film materials, and representative refractive index dispersion curves are shown for some of them. The dispersion constants for each material evaluated are also presented.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:17 ,  Issue: 3 )

Date of Publication:

May 1973

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