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Potential Distribution of an Inhomogeneously Doped MIS Array

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2 Author(s)
W. H. Chang ; IBM System Products Division, Burlington Laboratory, Essex Junction, Vermont 05452, USA ; H. S. Lee

A numerical method is used to obtain the potential distribution of a two-dimensional, inhomogeneously doped MIS array under pulse voltage operation. The effects of interface charge and of impurity doping and its locations on the surface potential profile are presented. The technique is useful for designing an appropriate surface potential profile for ion-implanted charge-coupled devices.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:18 ,  Issue: 1 )