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Structure Dependence of Free-Charge Transfer in Charge-coupled Devices

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2 Author(s)
W. H. Chang ; IBM System Products Division Laboratory at Burlington, P.O. Box 4, Essex Junction, Vermont 05452, USA ; L. G. Heller

A detailed numerical analysis of charge-coupled-device (CCD) charge transfer is described and discussed. The analysis is based on solving the transport equation with a time-dependent surface field calculated from the actual device configuration. Devices with different oxide thicknesses and devices with electrode gaps are examined. The total field is found to play an important role in charge transfer for all cases studied. The effective channel length is modulated by the net field present and is a function of time and electrode configuration. The transfer is found fastest and the effective channel length shortest when the charge is transferred from a region of low oxide capacitance into a region of high oxide capacitance. A low-capacitance electrode gap slows the charge transfer process.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:18 ,  Issue: 5 )