By Topic

On Dislocations in GaAs1−xPx

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Mader, S. ; Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA ; Blakeslee, A.E.

Misfit dislocations in epitaxially grown layers of GaAs1−xPx with a lattice constant gradient are examined by transmission electron microscopy. In specimens with (113) A growth planes, they form a three-dimensional arrangement of glissile and sessile dislocations. Cross slip is an important process in the generation of the dislocations. High resolution microscopy shows 1) glissile dislocations dissociated into partial dislocations and 2) undissociated sessile Lomer dislocations. These differences are attributed to contributions to the dislocation core energy from wrong bonds and dangling bonds. Screw dislocations are also thought to be undissociated, which facilitates cross slip and multiplication of dislocations.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:19 ,  Issue: 2 )