Johnson, Johnson, and Lampert have studied the effect of Al implantation on the trapping behavior of SiO2. The large fluence that they used (1 × 1014 Al/cm2) and the low annealing temperatures (up to 600°C) resulted in a trapping efficiency of 1 and made it impossible to characterize the traps. In the present study a lower fluence and higher annealing temperatures to reduce the trapping efficiency are used to permit characterization of the traps. The predominant trap cross sections are 1.26 × 10−16 and 1.40 × 10−17 cm2. In a companion paper by DiMaria, Young, Hunter, and Serrano the location of the trapped charge is discussed.
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IBM Journal of Research and Development
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06 April 2010
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