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Characterization of Electron Traps in Aluminum-Implanted SiO2

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4 Author(s)
Young, D.R. ; IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA ; DiMaria, D.J. ; Hunter, W.R. ; Serrano, C.M.

Johnson, Johnson, and Lampert have studied the effect of Al implantation on the trapping behavior of SiO2. The large fluence that they used (1 × 1014 Al/cm2) and the low annealing temperatures (up to 600°C) resulted in a trapping efficiency of 1 and made it impossible to characterize the traps. In the present study a lower fluence and higher annealing temperatures to reduce the trapping efficiency are used to permit characterization of the traps. The predominant trap cross sections are 1.26 × 10−16 and 1.40 × 10−17 cm2. In a companion paper by DiMaria, Young, Hunter, and Serrano the location of the trapped charge is discussed.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:22 ,  Issue: 3 )