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Near-Ideal Si-SiO2 Interfaces

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2 Author(s)
L. A. Kasprzak ; IBM Data Systems Division laboratory, East Fishkill (Hopewell Junction), New York 12533, USA ; A. K. Gaind

The Si-SiO2 interface plays a key role in insulated-gate field-effect transistors (IGFETs). Of principal concern are the interface charge density Qic and the fast-state density Nfs. These properties can be optimized by eliminating the transition region and creating an abrupt interface. Our work with the chemical vapor deposition (CVD) of SiO2 using a CO2-SiH4-H2 system in the presence or absence of trace amounts of HCl gas at 1000°C has demonstrated that unannealed CVD SiO2 on (100) Si using a vertical-cold-wall reactor has properties similar to those of unannealed SiO2 on (100) Si formed by the usual thermal oxidation procedure. In addition, using only 2.27 vol% HCl, we have produced films of SiO2 on (111) Si that are better than their thermal counterparts, unannealed or annealed; i.e., Qic ≈ 5 × 1010 cm−2 and Nfs ≈ 1010 cm−2-eV−1. We attribute these results, at least in part, to an abrupt interface between the CVD SiO2 and Si. Deposition rates of 10–20 nm/min were used to reproducibly deposit 30–50 nm of SiO2. The CVD SiO2 films also show a significantly lower standard deviation in the breakdown fields (±1.5%) and the mobile charge densities (±5%) than their thermal counterparts. In general, Nfs was independent of Qic.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:24 ,  Issue: 3 )