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A Silicon and Aluminum Dynamic Memory Technology

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1 Author(s)
Richard A. Larsen ; IBM General Technology Division laboratory, Essex Junction, Vermont 05452, USA

The Silicon and Aluminum Metal Oxide Semiconductor (SAMOS) technology is presented as a high-yield, low-cost process to make one-device-cell random access memories. The characteristics of the process are a multilayer dielectric gate insulator (oxide-nitride), a p-type polysilicon field shield, and a doped oxide diffusion source. Added yield-enhancing features are backside ion implant gettering, dual dielectric insulators between metal layers, and circuit redundancy. A family of chips is produced using SAMOS, ranging from 18K bits to 64K bits. System features such as on-chip data registers are designed on some chips. The chip technology is merged with “flip-chip” packaging to provide one-inch-square modules from 72K bits through 512K bits, with typical access times from 90 ns to 300 ns.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:24 ,  Issue: 3 )