By Topic

Properties of AuIn2 Resistors for Josephson Integrated Circuits

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $33
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
C. J. Kircher ; IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA ; S. K. Lahiri

The influences of film thickness and composition on the resistivity and microstructure of AuIn2 films, which are used as resistors in Josephson integrated circuits, have been investigated. The films were prepared by evaporating Au and In layers onto SiO-coated Si wafers held at 348 K. The resistivity at 4.2 K was found to be ≈5 µΩ-cm for 40-nm-thick films and to vary as ≈d−0.76 over the thickness range 30–250 nm. Corresponding sheet resistances ranged from 0.05 to 2 Ω/□. Resistivity changes were also observed as the composition was altered. A decrease of ≈10% in the In/Au thickness ratio from that of AuIn2 produced an increase of ≈50% in resistivity. A similar increase in In/Au ratio produced ≤10% decrease in resistivity. Electron microscopy analysis revealed that the grain size of AuIn2 films increases with film thickness, and is approximately two times smaller for the low In/Au ratio films than for those of nominal or larger In/Au ratios. The factors governing the resistivity of AuIn2 films were analyzed using the Fuchs surface scattering and Mayadas-Shatzkes (M-S) grain boundary scattering theories. It was found that the M-S theory can be used to explain the resistivity data for a range of choices of r and p, the grain-boundary-reflection and surface-reflection coefficients, respectively. Reasonable agreement was obtained for parameter values between r = 0.31, p = 0, ρl = 3 × 10−11 Ω-cm2 and r = 0.74, p = 1, ρl = 0.8 × 10−11 Ω-cm2. The available evidence is interpreted as favoring grain boundary scattering as the dominant scattering mechanism.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:24 ,  Issue: 2 )