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A process for fabricating experimental Josephson integrated circuits is described that is based primarily on the use of vacuum-deposited Pb-alloy and SiO films patterned by photoresist stencil lift-off. The process has evolved from one previously reported, with changes having occurred in junction electrodes, tunnel barrier formation, layer patterning, device geometry, and minimum linewidths. Films of Pb-In(12 wt%)-Au(4 wt%) alloy (200–800 nm thick) are used for forming junction base electrodes, interferometer controls, and interconnection lines. Tunnel barriers are formed on the base electrode films by thermal oxidation and subsequent sputter-etching in an rf-oxygen plasma. Junction counter electrodes are formed from 400-nm-thick Pb-Bi(29 wt%) alloy films. Ground planes are formed from 300-nm-thick Nb films patterned by subtractive etching and insulated in part by a Nb
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