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Defect-Related Breakdown and Conduction in SiO2

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3 Author(s)
Shatzkes, Morris ; IBM Data Systems Division laboratory, East Fishkill (Hopewell Junction), New York 12533, USA ; Av-Ron, Moshe ; Gdula, Robert A.

A statistical model incorporating the effects of defects provides a good representation of breakdown results for Al-SiO2-Si MOS capacitors. Implications of this model for interpretation of the yield from life tests and histograms obtained from ramp tests are discussed for the case of a Poisson distribution of defects over the capacitors. The breakdown rates of MOS capacitors in life tests are found to be correlated to defects inferred from conduction measurements.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:24 ,  Issue: 4 )

Date of Publication:

July 1980

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