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Proximity Effects in Electron Lithography: Magnitude and Correction Techniques

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1 Author(s)
Parikh, Mihir ; IBM Research Division laboratory, 5600 Cottle Road, San Jose, California 95193, USA

Proximity effects due to electron scattering in the resist and substrate seem to set a fundamental limit to the areal density that can be achieved in electron lithography. This work briefly reviews the form and the magnitude of the proximity function and its extent as evidenced by deviations in designed linewidths. It also discusses methods to decrease the proximity effect as well as the algorithms used for correction of such effects.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:24 ,  Issue: 4 )