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Propagation margins of contiguous disk devices fabricated on both single- and double-layer garnet films have been measured. These performance measurements for 1-µm diameter magnetic bubble propagation were made on devices with cell sizes of 18 and 30 µm2. The dependence of bias margin on ion-implantation conditions, material parameters, propagation pattern geometries, and temperature is discussed. Deuterium implantation is introduced, together with a new propagation pattern. Implantation with deuterium induces an anisotropy field change similar to that with hydrogen but with 50% smaller dosage. The new propagation pattern, with sawtooth-shaped tracks, reduces the interaction between charged walls of adjacent propagation tracks, thus resulting in improved performance at low bias fields.
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