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Propagation of 1-µm Bubbles in Contiguous Disk Devices

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6 Author(s)
Ju, K. ; IBM Research Division laboratory, San Jose, California 95193, USA ; Hu, H.L. ; Hirko, R.G. ; Moore, E.B.
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Propagation margins of contiguous disk devices fabricated on both single- and double-layer garnet films have been measured. These performance measurements for 1-µm diameter magnetic bubble propagation were made on devices with cell sizes of 18 and 30 µm2. The dependence of bias margin on ion-implantation conditions, material parameters, propagation pattern geometries, and temperature is discussed. Deuterium implantation is introduced, together with a new propagation pattern. Implantation with deuterium induces an anisotropy field change similar to that with hydrogen but with 50% smaller dosage. The new propagation pattern, with sawtooth-shaped tracks, reduces the interaction between charged walls of adjacent propagation tracks, thus resulting in improved performance at low bias fields.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:25 ,  Issue: 4 )

Date of Publication:

July 1981

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