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Finite-Element Analysis of Semiconductor Devices: The FIELDAY Program

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4 Author(s)
Buturla, E.M. ; IBM General Technology Division laboratory, Essex Junction, Vermont 05452, USA ; Cottrell, P.E. ; Grossman, B.M. ; Salsburg, K.A.

The FIELDAY program simulates semiconductor devices of arbitrary shape in one, two, or three dimensions operating under transient or steady-state conditions. A wide variety of physical effects, important in bipolar and field-effect transistors, can be modeled. The finite-element method transforms the continuum description of mobile carrier transport in a semiconductor device to a simulation model at a discrete number of points. Coupled and decoupled algorithms offer two methods of linearizing the differential equations. Direct techniques are used to solve the resulting matrix equations. Pre- and post-processors enable users to rapidly generate new models and analyze results. Specific examples illustrate the flexibility and accuracy of FIELDAY.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:25 ,  Issue: 4 )