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Oxygen Incorporation and Precipitation in Czochralski-Grown Silicon

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4 Author(s)
Murgai, A. ; IBM General Technology Division, East Fishkill facility, Hopewell Junction, New York 12533, USA ; Patrick, W.J. ; Combronde, J. ; Felix, J.C.

Oxygen incorporation is examined for growth of large-diameter (80–130 mm) silicon single crystals by the Czochralski method. The primary growth parameters affecting the oxygen concentration in the crystals are shown to be the crystal-melt interface position within the hot zone and the rate of crucible rotation used. Tight control of the oxygen concentration [±1.5 parts per million atomic (ppma) in the range of 25–40 ppma (ASTM)] has been reproducibly attained by programmed variation of these growth parameters. The attainable oxygen concentrations may be extended over a wider range (20–45 ppma) through slight modifications of the hot zones. Wafers from the uniform-oxygen-concentration crystals are subjected to single-step and two-step annealing procedures (700–1100°C) for oxygen precipitation studies. The rate of precipitation is shown to depend on the initial oxygen content and on the number of initially unpopulated nucleation sites present.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:26 ,  Issue: 5 )