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Resist profile control in E-beam lithography

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1 Author(s)
Sherry J. Gillespie ; IBM General Technology Division, Burlington facility, Essex Junction, Vermont 05452, USA

Imaging studies have confirmed that a desired resist profile can be obtained by selecting the appropriate combination of process parameters: dose, interrupted development, pattern bias, and resist thickness. Bias sensitivity of the resist image to process parameters was measured using a positive diazo resist with nonlinear development characteristics on an IBM EL-3 E-beam tool. Because of superior bias stability, top-edge imaging with undercut profiles in a single-layer resist was found to provide many of the imaging advantages of a multilayer system. Sufficient resolution and image quality are obtained to extend the application of a single-layer resist system to 1-µm lithography.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:28 ,  Issue: 4 )